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Epitaxial technologies

Epitaxial technologies available

  • MOCVD and MBE technologies for device quality InP-, GaAs-, III-Nitride materials; 2" to 3" with support on material characterization such as XRD, PL mapping, doping calibration
  • Hot wall, low-pressure hydride vapor phase epitaxy (LP-HVPE) reactor for growth of InP and GaAs. Operation close to equilibrium allows perfect selectivity and very high growth rates, making it suitable for eg. Regrowth, selective area epitaxy, epitaxial lateral overgrowth (ELOG) in heteroepitaxy.
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