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Lithography

Lithography tools and techniques available

  • Optical lithography / g-line stepper (446nm wavelength), 100mm wafer size. Alignment accuracy: 90nm
  • Optical lithography: i-line stepper (365nm wavelength), 150mm wafer size. Alignment accuracy: 90nm
  • Interferometric lithography (193nm wavelength)
  • Nanoimprint lithography: both hard and soft stamps; 2, 3, 4 and 6" wafer size. Resolution: 60nm; alignment accuracy: 500nm
  • Mask aligners: wafer sizes: 200mm, 150mm, 3", 2" and wafer pieces; Exposure modes: Hard Contact, Soft Contact, Low Vacuum Contact, Vacuum Contact, Proximity; Alignment modes: Front, Backside and Pre-bond Alignment
  • Electro beam lithography (EBL): Resolution down to 30 nm; stiching error <60 nm (3 sigma); stich-error free patterning over large areas; small pieces up to 4" wafer size.
  • Direct laser writing lithography: 442nm wavelength, sample size from 5mm to 150mm wafers
  • Photoresist dispensers and developer modules: Bake modules plus cool plates, Indexers and robotic wafer transportation; Develop/Resist spin bowl; Hot plate temperature uniformity and control: + 1.0 ºC @ 50-200 ºC and + 2.0 ºC @ 210-350 ºC ; Cool plate temperature uniformity and control: + 0.3 ºC @ 17-24 ºC. Spin speed accuracy control/uniformity: + 5 rpm @ 10-200 rpm; + 2 rpm @ 210-8000 rpm. Photoresist uniformity (across wafer): < 15 Å (1 sigma); Photoresist uniformity (wafer-to-wafer): < 20 Å (1 sigma)
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