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KTH - Kungl Tekniska Hogskolan

Division of Semicondutor Materials

KTH logoThe participating groups has extensive expertise on Photonic Integration, III-V nano-structures and nano-structured materials, covering physics, technology and applications.

Research group of S. Anand: The group is a pioneer in deep-etching of photonic crystals in InP-based structures and has demonstrated several devices or device-concepts such as lasers, filters, and negative-refraction. The group has also made significant contributions on the understanding of the physical mechanisms in nanofabrication of photonic crystals and its implication on electrical conduction. Nanostructuring (random) on Si, III-Vs using a combination of colloidal lithography and dry etching has also been developed. Self-organized formation of nano-pilars in InP-based materials has been developed. Such pillars can also be composed of multiple layers composing InP, GaInAsP, InGaAs – thus covering a wide band-gap range. The methodology and application of Atomic force microscopy based electrical characterization techniques have been established for 2D mapping of the electrical properties of materials and devices, including low dimensional structures containing QWs/Q-dots, with nanoscale spatial resolution.

Research group of S.Lourdudoss: The group has pioneered epitaxial solutions such as selective area growth, epitaxial lateral overgrowth and heteroepitaxy. Specific expertise include selective area growth of III-Vs on planar and non-planar substrates for discrete and integrated components; heteroepitaxy for Si-photonics and for large size III-V layers on Si for applications such as solar cells. The group specializes on high speed devices for telecom applications, novel solutions for optical interconnects, and high temperature quantum cascade lasers for sensing applications.

Partner: KTH

Group Leaders: This e-mail address is being protected from spambots. You need JavaScript enabled to view it , This e-mail address is being protected from spambots. You need JavaScript enabled to view it


Available Resources

KTH cleanroomDry etching systems: Ion-beam etching system; ICP-RIE for III-Vs, III-nitrides; ICP-RIE: Si; dielectric (SiO2 and SiNx) deposition and etching; Hydride vapor phase epitaxy; HR-SEM; Atomic force microscope including electrical characterization modules; Micro-Photoluminescence (visible to NIR) and micro-Raman; other PL set-ups; FTIR (near UV – 2.8 µm); End-fire set-up for photonic component (waveguides etc) characterization.
Access to other equipments in the in-house “Electrum laboratory”: e.g. MOVPE (III-Vs); HVPE ; Chemical synthesis lab; wet chemistry; Metal deposition; photo-lithography; Optoelectronic device (eg. Edge-emitting, surface emitting lasers, leds) and material characterization facilities; electron microscopy (SEM, TEM); e-beam lithography (Raith 150) at Albanova campus

Detailed information is available at www.electrumlaboratoriet.se

Key Personnel

Srinivasan Anand, associate professor, is the coordinator for KTH in this NOE. He has over fifteen years of experience in the area of semiconductor materials, devices and processing. His research interests and areas of expertise include photonic crystals, Nanofabrication, low-dimensional semiconductor structures, nanostructured semiconductor materials, NIR LEDs and Lasers, Photovoltaics, and scanning probe microscopy based characterization tools. On these research topics he has authored/co-authored over 160 publications (journal and conference proceedings) and is a co-inventor on three patents. He is/has been the project leader of several research projects including large scale infrastructure grants funded by the Swedish Research Agencies. He has participated as the partner cooridinator/task leader in several EU projects such as PCIC, epixnet, Nanolase, and Herculas.

Sebastian Lourdudoss, Professor, gained his M.Sc. degree in chemistry from Madras University, India in 1976 and Ph.D. degree in physical chemistry from Faculté Libre des Sciences, Lille, France in 1979. From 1980-85 he was working at KTH, Sweden, on physico-chemical aspects of thermochemical energy storage and chemical absorption heat pumps. From 1985-93, he was with Swedish Institute of Microelectronics, Kista, Sweden where he developed vapour phase epitaxy and other processing techniques for III-V semiconductor based devices for photonic applications. In 1993, he moved back to KTH, where he is currently a professor and head of Laboratory of Semiconductor Materials. Along with his colleagues, he has developed attractive technologies for realising semi-insulating buried heterostructure lasers comprising of both edge and vertical emitting lasers emitting at short and long wavelengths. These lasers were based on materials related to gallium arsenide and indium phosphide. High speed modulation has been the main focus in several of these lasers. He also worked on gallium nitride and related materials for intersubband transition modulator applications. His current interests are monolithic photonic integration on indium phosphide platform and III-V’s on Si for nanophotonics, optical interconnects and energy harvesting; an additional interest is on buried quantum cascade lasers operating at room temperature and above for sensing applications. He is a director of graduate education at KTH and also the director of the graduate school within the national excellence centre, Linné Centre for optics and photonics at KTH. He holds one patent and has published over 200 articles in international journals and conference proceedings. He has managed or actively participated in several national, EU and international projects.

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