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CEA-LETI · Commissariat Energie Atomique

Leti logoLeti is an institute of CEA, a French research-and-technology organization with activities in energy, IT, healthcare, defence and security. Leti is focused on creating value and innovation through technology transfer to its industrial partners. It specializes in nanotechnologies and their applications, from wireless devices and systems, to biology, healthcare and photonics. NEMS and MEMS are at the core of its activities. In addition to Leti's 1,700 employees, there are more than 250 students involved in research activities, which makes Leti a mainspring of innovation expertise. Leti's portfolio of 1,880 families of patents helps strengthen the competitiveness of its industrial partners.

Partner: LETI

Group Leader:  This e-mail address is being protected from spambots. You need JavaScript enabled to view it

Website: http://www-leti.cea.fr/

Available Resources

MOCVD and MBE III-V growth, Chemical Mechanical Polishing, confocal/near-field microscopy.

Institutional Facilities: 200mm Clean room, 300mm Clean room and process III-V clean room facilities.

  1. Photovoltaic area
  2. LED area
    1. epitaxial growth- ZnO nanowire MOCVD growth (autoorganized non catalytic growth, vertically aligned nanowire , growth possible on different substrates)- GaN/InGaN nanowire MOCVD/MBE growths (autoorganized non catalytic growth of vertically aligned nanowire on Si substrate)- localized growth of ZnO and GaN nanowires (in progress, in collaboration with INAC@CEA)-MOCVD growth (ZnO and ZnMgO/ZnO) on saphir and ZnO substrate.-MOCVD growth (GaN/InGaN and AlGaN) on saphir substrate
    2. Technology- GaN-based LED Processing- nanostructure etching on GaN et ZnO layer- Etching and electrical contact on ZnO layers -electrical contact on nanowire layer (GaN et ZnO, process of encapsulation/planarization using CMP) - Planarized metal-dielectric nanostructured electrodes with square profiles- metal-dielectric nanostructured electrodes with sinusoidal profiles-metallic nanoantennas
    3. Nanocharacterization- Room temperature Confocal microscopy (electroluminescence  and  photoluminescence), Emission diagram (power calibrated), photoluminescence goniometry, Cathodoluminescence, Near field  electrical characterization (c-AFM, SSRM, SCM)
    4. 2.4 Design / simulation- Colorimetry optimization, Optical design of nanostructuration for improved light extraction (FDTD, RCWA, BEM, FEM)
  3. Alternative technologies for nanopaterning
    1. Di block Copolymers
    2. Interferometric lithography (193nm) : several pitches,  up to 70nm
    3. e-beam lithography
    4. nanoimprint lithography (200mm wafer max) on different substrates

Key Personnel

Yohan Desieres obtained his PhD on photonic crystal based waveguide and microcavities at INL in Lyon in 2001. He has been worked then at CEA LETI, on plasmonics based devices and nanowire or photonic crystal LED.
Marylin Armand  focused on advanced optical design for  photovoltaic devices inprovments. She is in charge of the Solamon FP7

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